JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
MMBT2222A TRANSISTOR (NPN)
FEATURES
z Epitaxial planar die construction
z Complementary PNP Type available(MMBT2907A)
MARKING: 1P
MAXIMUM RATINGS (T a =25℃ unless otherwise noted)
ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter
Symbol Test conditions M in T yp M ax Unit Collector-base breakdown voltage
V (BR)CBO I C = 10μA, I E =0 75 V Collector-emitter breakdown voltage
V (BR)CEO * I C = 10mA, I B =0 40 V Emitter-base breakdown voltage
V (BR)EBO I E =10μA, I C =0 6 V Collector cut-off current
I CBO V CB =60V, I E =0 0.01 μA Collector cut-off current
I CEX V CE =30V,V BE(off)=3V 0.01 μA Emitter cut-off current I EBO V EB = 3V, I C =
0 0.1 μA h FE(1) * V CE =10V, I C = 150mA
100 300 h FE(2) V CE =10V, I C = 0.1mA
40 DC current gain h FE(3) * V CE =10V, I C = 500mA
贴片
三极管>线绕电阻
42 Collector-emitter saturation voltage V CE(sat) * I C =500 mA, I B = 50mAI C =150 mA, I B =15mA
1 0.3 V Base-emitter saturation voltage V BE(sat) * I C =500 mA, I B = 50mA
I C =150 mA, I B =15mA
2.0 1.2 V Transition frequency f T V CE =20V, I C = 20mA,
f=100MHz
网站实时监控300 MHz Delay time t d 10 n s Rise time t r V CC =30V, V BE(off)=-0.5V I C =150mA , I B1= 15mA 25 n s Storage time
t S 225 n s Fall time
t f V CC =30V, I C =150mA I B1=-I B2=15mA 60 n s
*pulse test: Pulse Width ≤300μs, Duty Cycle ≤ 2.0%. SOT-23 1. BASE 2.EMITTER 3.COLLECTOR B,Nov,2011
0.1
1
10
100
02550751001251500.0
0.10.2
0.30.4
0.5
0.00
0.05
0.10
0.150.200.25
I C 10MMBT2222A Typical Characterisitics
蒸汽消毒锅C
O L L E C T O R C U R R E N T I C
(m A ) AMBIENT TEMPERATURE Ta ()℃h FE —— C
O L L E C T O R -E M I T T E R S A T U R A T I O N V
ddtsfO
L
T A G E
V C E
s
a
t
(V )
Static Characteristic
C O L L E C T O R C U R R E N T I C
(A ) 80
500 T
R A N S T I O N F R E Q U E N C Y f T (M H z )
COLLECTOR CURRENT I C (mA)B,Nov,2011
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