JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors
2SD1306 TRANSISTOR (NPN)
ApplicationLow
z frequency amplifier, Mutingled显指数
MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol
Parameter Value Unit V CBO
Collector -Base Voltage 30 V V CEO
Collector-Emitter Voltage 15 V V EBO
Emitter-Base Voltage 5 V I C
Continuous Collector Current 0.7 A P C
Collector Dissipation 0.15 W R θJA
Thermal Resistance from Junction to Ambient 833 ℃/ W T J
Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter
Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage
V (BR)CBO I C =10uA,I E =0 30 V Collector-emitter breakdown voltage
V (BR)CEO I C =1mA,I B =0 15 V Emitter-base breakdown voltage
V (BR)EBO I E =10uA, I C =0 5 V Collector cut-off current
I CBO V CB =20V,I E =0 1
uA Emitter cut-off current
I EBO V EB =4V,I C =0 1
uA DC current gain
铁水
预处理h FE * V CE =1V,I C =150mA 250 800 Collector-emitter saturation voltageV CE(sat) * I C =500mA,I B =50mA 0.5 V Base-emitter voltage
V BE * V CE =1V,I C =150mA 1 V Transition frequency f T * V CE =1V,f =
150MHz 250 MHz
CLASSIFICATION of h FE
Rank
D E Range
250-500 400-800 Marking ND NE
SOT-23 1. BASE 2. EMITTER
3. COLLECTOR
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【南京南山半导体有限公司 — 长电贴片三极管选型资料】 www.nscn 【南京南山半导体有限公司 — 长电三极管选型资料】
The bottom gasket
人脸识别主机
The top gasket
3000×1 PCS 3000×15 PCS Label on the Reel Label on the Inner Box Label on the Outer Box QA Label Seal the box
with the tape Seal the box主机
漏洞扫描
with the tape Stamp “EMPTY”
on the empty box Inner Box: 210 mm × 208 mm ×203 mm Outer Box: 440 mm × 440 mm × 230 mm
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