JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
MMBT3906 TRANSISTOR
(PN P)
FEATURES
z As complementary type, the NPN transistor
MMBT3904 is Recommended
z Epitaxial planar die construction
MARKING: 2A
MAXIMUM RATINGS (T A =25℃ unless otherwise noted) Symbol Parameter Value Units
楔形塞尺
V CBO
Collector-Base Voltage -40 V V CEO
Collector-Emitter Voltage -40 V V EBO
Emitter-Base Voltage -5 V I C
Collector Current -Continuous -0.2 A P C
偶极子天线
Collector Dissipation 0.2 W R θJA
Thermal resistance junction to ambient 625 ℃/W T J
Junction Temperature 150 ℃ T stg Storage Temperature -55~+150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter
Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage
V (BR)CBO I C =-10μA, I E =0 -40
V Collector-emitter breakdown voltage
V (BR)CEO I C = -1mA, I B =0 -40
V Emitter-base breakdown voltage
V (BR)EBO I E = -10μA, I C =0 -5 V Collector cut-off current
I CBO V CB = -40 V, I E =0 -100nA Collector cut-off current
I CEX V CE =-30V, V BE(off)=-3V -50 nA Emitter cut-off current
I EBO V EB = -5V, I C =0 -100nA h FE1 V CE =-1V, I C = -10mA 100 300 h FE2 V CE = -1V, I C =-50mA 60 DC current gain
h FE3 V CE = -1V, I C =-100mA 30 Collector-emitter saturation voltage
贴片
三极管V CE(sat)1 I C =-50mA, I B =-5mA -0.3 V Base-emitter saturation voltage
V BE(sat) I C = -50mA, I B =-5mA -0.95V Transition frequency
f T V CE =-20V,I C =-10mA,f =100MHz 300 MHz Delay Time
td 35 nS Rise Time
tr V CC =-3V,V BE =-0.5V I C =-10mA, I B1=I B2=-1mA 35 nS Storage Time
ts 225 nS Fall Time tf V CC =-3V,I C =-10mA I B1=I B2=-1mA 75 nS CLASSIFICATION OF h FE(1)小电流选线
HFE 100-300 RANK L
H RANGE 100–200 200–300
D,May,2012
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【南京南山半导体有限公司 — 长电贴片三极管选型资料】 -10
510自动发卡-100-1-10200
400
6000255075100125150-0.1-1-10-100-0
-20
-40-60-80-100
h ——I -30
-300
C
O L L E C T O R -E M I T T E R S A T U R A T I O N V O
L
T
A
G E
V C
E s
a t
(m V
)
-500-3-30-50
T
R A
N S
I T I O
N
F
R
E Q U
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N C Y
f
T
(M H z )COLLECTOR CURRENT I C (mA)MMBT3906
Typical Characterisitics AMBIENT TEMPERATURE T a ()℃-30-3
C O L L E C T O R C U R R E N T I C
(m A )C O L L E C T O R C U R R E N T I C
(m A )
D,May,2012
www.nscn 【南京南山半导体有限公司 — 长电三极管选型资料】