JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
防盗器Value Unit DEVICE MARKING
BC846A=1A; BC846B=1B;
BC847A=1E; BC847B=1F; BC847C=1G;
BC848A=1J; BC848B=1K: BC848C=1L
A,May,2011
ELECTRICAL CHARACTERISTICS (T a=25℃unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage BC846
BC847 BC848 V CBO I C= 10µA, I E=0
80
50
30
V
贴片
三极管Collector-emitter breakdown voltage BC846BC847 BC848 V CEO I C= 10mA, I B=0
65
30
V
Emitter-base breakdown voltage V EBO I E= 10µA, I C
定向扬声器
=0 6 V
Collector cut-off current BC846
BC847 BC848 I CBO
V CB=70 V ,I E=0
V CB=50 V ,I E=0
V CB=30 V ,I E=0
threadx操作系统0.1
μA
Collector cut-off current BC846
BC847 BC848 I CEO
V CE=60 V ,I B=0
V CE=45 V ,I B=0
V CE=30 V ,I B=0
0.1
μA
Emitter cut-off current I EBO V EB=5 V , I C
=0 0.1
μA
DC current gain BC846A,847A,848A
BC846B,847B,848B BC847C,BC848C h FE V CE=5V,I C= 2mA
110
200
420
220
450
800
Collector-emitter saturation voltage V CE(sat)I C=100mA, I B= 5mA 0.5 V Base-emitter saturation voltage V BE(sat)I C=100mA, I B= 5mA 1.1 V
地热电缆Transition frequency f T V CE= 5 V, I C= 10mA f=100MHz
100 MHz
Collector output capacitance C ob V CB=10V,f=1MHz 4.5pF
A,May,2011
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