JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
BC817-16 BC817-25 BC817-40 TRANSISTOR (NPN)贴片
三极管 FEATURES z
For general AF applications z
High collector current z
降压散
High current gain z
Low collector-emitter saturation voltage z Complementary types: BC807 (PNP)
ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)
Parameter
Symbol Test conditions M in Typ M ax Unit Collector-base breakdown voltage
V CBO I C = 10μA, I E =0 50 V Collector-emitter breakdown voltage
V CEO I C = 10mA, I B =0 45 V Emitter-base breakdown voltage
V EBO I E = 1μA, I C =0 5 V Collector cut-off current引流袋
I CBO V CB = 45 V ,I E =0 0.1 μA Emitter cut-off current
电热碗I EBO V EB = 4V, I C =0 0.1 μA h FE(1) V CE = 1V, I C = 100mA 100 600 DC current gain
h FE(2) V CE = 1V, I C = 500mA 40 Collector-emitter saturation voltage
V CE (sat) I C = 500mA, I B = 50mA 0.7 V Base-emitter saturation voltage
V BE (sat) I C = 500mA, I B = 50mA 1.2 V Base-emitter voltage
V BE V CE = 1 V, I C = 500mA 1.2 V Collecter capactiance
C ob V CB =10V ,f=1MHz 10 pF Transition frequency f T V CE = 5 V, I C = 10mA
f=100MHz 100 MHz
CLASSIFICATION OF h FE (1)
Rank BC817-16 BC817-25 BC817-40 Range 100-250
160-400 250-600 Marking 6A 6B 6C
T-23
COLLECTOR B,May,2013
1100255075100125150BC817
Typical Characteristics COLLECTOR CURRENT I C (mA)I h —— AMBIENT TEMPERATURE T a ()
℃
B,May,2013
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