FDS89161 Dual N-Channel PowerTrench ® MOSFET
Pin 1
SO-8
D1D1
D2D2S2S1
G1
FDS89161 Dual N-Channel PowerTrench ® MOSFET
Electrical Characteristics T J = 25°C unless otherwise noted Off Characteristics
剥离力测试方法
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BV DSS Drain to Source Breakdown Voltage I D = 250 μA, V GS = 0 V
100 V ΔBV DSS ΔT J Breakdown Voltage Temperature Coefficient
I D = 250 μA, referenced to 25 °C
67
mV/°C I DSS Zero Gate Voltage Drain Current V DS = 80 V, V GS = 0 V 1μA I GSS
Gate to Source Leakage Current
V GS = ±20 V, V DS = 0 V
±100
nA
V GS(th)Gate to Source Threshold Voltage V GS = V DS , I D = 250 μA 234V ΔV GS(th) ΔT J Gate to Source Threshold Voltage Temperature Coefficient
I D = 250 μA, referenced to 25 °C -9 mV/°C
r DS(on)Static Drain to Source On Resistance V GS = 10 V, I D = 2.7 A
86105m ΩV GS = 6 V, I D = 2.1 A
120171V GS = 10 V, I D = 2.7 A, T J = 125 °C 144176
g FS
Forward Transconductance
V DS = 10 V, I D = 2.7 A
S C iss Input Capacitance V DS = 50 V, V GS = 0 V,f = 1MHz
158210pF C oss Output Capacitance
4358pF C rss Reverse Transfer Capacitance
35
pF R g
Gate Resistance
Ω
t d(on)Turn-On Delay Time V DD = 50 V, I D = 2.7 A,V GS = 10 V, R GEN = 6 Ω
4.210ns t r Rise Time
1.310ns t d(off)Turn-Off Delay Time 7.315ns t f Fall Time
1.9
珍珠岩
防火门芯板
10ns Q g(TOT)Total Gate Charge V GS = 0 V to 10 V V DD = 50 V, I D = 2.7 A3 4.1nC
Q g(TOT)Total Gate Charge V GS = 0 V to 5 V
1.7
Q gs Gate to Source Charge 0.8nC Q gd
Gate to Drain “Miller” Charge
0.8
nC V SD Source to Drain Diode Forward Voltage V GS = 0 V, I S = 2.7 A (Note 2)
0.85 1.3V V GS = 0 V, I S = 2 A (Note 2)0.82
1.2t rr Reverse Recovery Time I F =
2.7 A, di/dt = 100 A/μs
34
54ns Q rr
南少林降糖茶Reverse Recovery Charge
21
34
nC
NOTES:
1. R θJA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θJC is guaranteed by design while R θCA is determined by the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T J = 25°C, L = 3 mH, I AS = 3 A, V DD = 100 V, V GS = 10 V.
b) 135°C/W when mounted on a minimun pad
a) 78°C/W when
mounted on a 1 in 2 pad of 2 oz copper
MOSFET
MOSFET
MOSFET
豫公网安备41160202000603
站长QQ:729038198
关于我们
投诉建议