IRFP064N
HEXFET ® Power MOSFET
PD - 9.1383A
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the d
esigner with an extremely efficient and reliable device for use in a wide variety of applications.The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
S
D
G
V DSS = 55V R DS(on) = 0.008Ω
I D = 110A
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating
l 175°C Operating Temperature l Fast Switching
l
Fully Avalanche Rated
Description
TO-247AC
8/25/97
Parameter
Max.
Units
I D @ T C = 25°C Continuous Drain Current, V GS @ 10V 110 I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 80 A I DM
Pulsed Drain Current 390P D @T C = 25°C Power Dissipation 200W Linear Derating Factor 1.3W/°C V GS Gate-to-Source Voltage
± 20V E AS Single Pulse Avalanche Energy 480mJ I AR Avalanche Current
59A E AR Repetitive Avalanche Energy 20mJ dv/dt Peak Diode Recovery dv/dt 5.0
V/ns T J Operating Junction and
-55 to + 175T STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
R θJC Junction-to-Case
–––0.75R θCS Case-to-Sink, Flat, Greased Surface 0.24–––°C/W
R θJA
Junction-to-Ambient
–––
40
Thermal Resistance
IRFP064N
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
V DD = 25V, starting T J = 25°C, L = 190µH
R G = 25Ω, I AS = 59A. (See Figure 12) I SD ≤ 59A, di/dt ≤ 290A/µs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%. Caculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the package refer to Design Tip # 93-4
Source-Drain Ratings and Characteristics
Uses IRF3205 data and test conditions
IRFP064N
Fig 1. Typical Output Characteristics
负离子加湿器
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
10100
1000
0.1
1
10
100
I , D r a i n -t o -S o u r c e C u r r e n t (A )D
V , D rain-to-Source Voltage (V)D S
10100
1000
0.1
1
10
100
I , D r a i n -t o -S o u r c e C u r r e n t (A )D
V , Drain-to-Source Voltage (V)D S
110
100电插头
10004
5
6
7
8
9
10
G S
V , Ga te-to-So urce Voltage (V )D I , D r a i n -t o -S o u r c e C u r r e n t (A )
0.0
0.5
1.0
1.5
2.0
-60-40-20
20
40
60
80
100120140160180
J
T , Junction Temperature (°C)R
,
D r a i n -t o -S o u r c e O n R e s i s t a n c e
D S (o n )(N o r m a l i z e d )
IRFP064N
Fig 8. Maximum Safe Operating Area汽车脚垫制造
设备 Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode
Forward Voltage
01000
20003000400050006000700080001
10
100
C , C a p a c i t a n c e (p F )
D S
V , Drain-to-Source Voltage (V)
04
8
12
16
20
机器码注册码30
60
90
120
150
180
Q , Total Gate Charge (nC )G
V , G a t e -t o -S o u r c e V o l t a
g e (V )G S
10100
10000.6
1.0
1.4
1.8
2.2
麻石脱硫除尘器
2.6
3.0
V , Source-to-D rain Voltage (V)I , R e v e r s e D r a i n C u r r e n t (A )
SD
S D 1
10
100
1000
1
10
100
V , Drain-to-Source Voltage (V)DS
I , D r a i n C u r r e n t (A )
D
IRFP064N
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a.
Switching Time Test Circuit
V V d(on)
r
d(off)
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
V DD
豫公网安备41160202000603
站长QQ:729038198
关于我们
投诉建议