algan光阴极光谱响应对日盲特性影响分析研究

第41卷第12期红外技术 V ol.41 No.12 2019年12月 Infrared Technology Dec. 2019 1156 〈微光技术〉

Research on the Relationship Between Solar-blindness Property of UV Detector

and Spectral Response Curve of AlGaN Photocathode

CHENG Hongchang 1,2，SHI Feng 1,2，YAN Lei 1,2，REN Bin 1,2，BAI Xiaofeng 1,2

(1. S cience and Technology on Low-Light-level Night Vision Laboratory , Xi’an 710065, China ;

2. Kunming Institute of Physics , Kunming 650223, China )

Abstract ：AlGaN is a wide band gap semiconductor material, with a forbidden bandwidth that varies with change in Al content, from 3.4 eV to 6.2 eV . Based on the principle of the external photoelectric effect, it is evident that the long wave threshold value of the AlGaN photocathode varies with change in its Al content. This study proposes the use of new measures, the background noise, effective signal, and the spectral signal-noise ratio, by which we perform a comparative analysis of five kinds of AlGaN photocathode spectral response curves and evaluate the solar-blindness of the corresponding UV detectors. According to the comparison, the target detection ability can be illustrated by the spectral res

ponse curve. A greater spectral signal-noise ratio and a smaller background signal-noise ratio correspond to improved detector solar-blindness. The concepts proposed in this study provide technical support for a user to select the proper solar blind ultraviolet detector according to the spectral response curve.

Key words ：AlGaN photocathode, spectral response, solar-blindness

AlGaN 光阴极光谱响应对日盲特性影响分析研究

程宏昌1,2，石峰1,2，闫磊1,2，任彬1,2，拜晓锋1,2

激光快速成型机（1. 微光夜视技术重点实验室，陕西西安 710065；2. 昆明物理研究所，云南昆明 650223）

摘要：AlGaN 是一种宽带半导体材料，随着材料中Al 含量的不同，其禁带宽度有所不同，可以实现

自动擦鞋机多功能锤子从3.4～6.2 eV 。基于外光电效应原理，用AlGaN 制成的光阴极因Al 含量的不同，其长波阈值也有所

不同。本文对5条AlGaN 光阴极光谱曲线，采用数值计算的方法，从背景噪声、有效信号、光谱信

噪比等方面进行对比分析，并通过以上参数对日盲紫外探测器特性进行评价。经研究发现，可以通过

光谱响应曲线对探测器日盲特性进行评价。光谱信噪比越好，则日盲探测器性能越好。这为用户提供

了一种评价探测器日盲特性的方法。

关键词：AlGaN 光阴极；光谱响应；日盲

中图分类号：TN231 文献标识码：A 文章编号：1001-8891(2019)12-1156-05

0 Introduction Ultraviolet missile warning technology has become a popular research topic in the field of optoelectronic countermeasures [1]. An advanced UV missile warning system needs to be equipped with a good solar blind UV detector; this has become the consensus of the industry.

隔膜胶水UV detectors can be categorized as internal and external

photoelectric effect types by working principle [2]. At

present, most of the research on the photoelectric effect

type ultraviolet detector has been focused on AlGaN-,

ZnO-, and SiC-based ultraviolet detectors [3]. External

亚克力抽奖箱photoelectric effect type UV detectors include Cs 2Te and

AlGaN photocathode image intensifiers. The internal

通用模型

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