...Barrier Height Variations in AlGaN GaN HEMT
902IEEE ELECTRON DEVICE LETTERS,VOL.36,NO.9,SEPTEMBER2015 Piezoelectricity-Induced Schottky Barrier Height Variations in AlGaN/GaN High ElectronMobility TransistorsKaiyuan Yao,Sourabh Khandelwal,Firas
时间:2023-10-14 热度:11℃