GaNnano-pendeo-epitaxyonSi(111)substrates
Phys. Status Solidi C 6, No. S2, S527–S530 (2009) / DOI 10.1002/pssc.200880801自动化监测GaN nano-pendeo-epitaxyon Si(111) substratesChaowang Liu*, Wang Nang Wang, Somyod Denchitcharoen, Alan Gott, Ph
时间:2023-08-31 热度:13℃