ANALOG DEVICES AD587 数据手册

aFEATURESLaser Trimmed to High Accuracy:10.000 V ؎5 mV (L and U Grades)Trimmed Temperature Coefficient:5 ppm/؇C max, (L and U Grades)Noise Reduction CapabilityLow Quiescent Current: 4 mA maxOutput Trim CapabilityMIL-STD-883 Compliant Versions AvailablePRODUCT DESCRIPTIONThe AD587 represents a major advance in the state-of-the-art inmonolithic voltage references. Using a proprietary ion-implantedburied Zener diode and laser wafer trimming of high stabilitythin-film resistors, the AD587 provides outstanding perfor-mance at low AD587 offers much higher performance than most other10 V references. Because the AD587 uses an industry standardpinout, many systems can be upgraded instantly with theAD587. The buried Zener approach to reference design pro-vides lower noise and drift than bandgap voltage references. TheAD587 offers a noise reduction pin which can be used to furtherreduce the noise level generated by the buried AD587 is recommended for use as a reference for 8-, 10-,12-, 14- or 16-bit D/A converters which require an externalprecision reference. The device is also ideal for successiveapproximation or integrating A/D converters with up to 14 bitsof accuracy and, in general, can offer better performance thanthe standard on-chip AD587J, K and L are specified for operation from 0°C to+70°C, and the AD587S, T and U are specified for –55°C to+125°C operation. All grades are available in 8-pin cerdip. TheJ and K versions are also available in an 8-pin Small Outline IC(SOIC) package for surface mount applications, while the J, K,and L grades also come in an 8-pin plastic mation furnished by Analog Devices is believed to be accurate andreliable. However, no responsibility is assumed by Analog Devices for itsuse, nor for any infringements of patents or other rights of third partieswhich may result from its use. No license is granted by implication orotherwise under any patent or patent rights of Analog Precision10 V ReferenceAD587FUNCTIONAL BLOCK DIAGRAMNOISE+VINREDUCTION28RSA16VOUTRFRT5TRIMRIAD5874GNDNOTE:PINS 1,3, AND 7 ARE INTERNAL TEST CONNECTIONS TO THESE T trimming of both initial accuracy and temperaturecoefficients results in very low errors over temperature with-out the use of external components. The AD587L has amaximum deviation from 10.000 V of ±8.5 mV between 0°Cand +70°C, and the AD587U guarantees ±14 mV maximumtotal error between –55°C and +125° applications requiring higher precision, an optional finetrim connection is system using an industry standard pinout 10 volt refer-ence can be upgraded instantly with the noise of the AD587 is very low, typically 4 µV p-p. Anoise reduction pin is provided for additional noise filteringusing an external AD587 is available in versions compliant with MIL-STD-883. Refer to the Analog Devices Military ProductsDatabook or current AD587/883B data sheet for Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, : 781/329-4700World Wide Web Site: : 781/326-8703© Analog Devices, Inc., 2000

AD587–SPECIFICATIONS(T = +25؇C, V = +15 V unless otherwise noted)AINModelOUTPUT VOLTAGEOUTPUT VOLTAGE DRIFT10°C to +70°C–55°C to +125°CGAIN ADJUSTMENTLINE REGULATION113.5 V ≤ + VIN ≤ 36 VTMIN to TMAXLOAD REGULATIONSourcing 0 < IOUT < 10 mATMIN to TMAXSourcing –10 < IOUT < 0 mA2TMIN to TMAXQUIESCENT CURRENTPOWER DISSIPATIONOUTPUT NOISE0.1 Hz to 10 HzSpectral Density, 100 HzLONG-TERM STABILITYSHORT-CIRCUIT CURRENT-TO-GROUNDSHORT-CIRCUIT CURRENT-TO-VINTEMPERATURE RANGESpecified Performance (J, K, L)Operating Performance (J, K, L)3Specified Performance (S, T, U)Operating Performance (S, T, U)31 AD587J/SMinTyp9.990Max10.0102020 AD587K/TMinTyp9.995Max10.0051010 AD587L/UMinTypMax9.99510.00555+3–1UnitsVppm/°C%+3–1+3–1100100100±µV/V11530300–40–55–557070+70+85+125+1250–40–55–554230157070+70+85+125+1250–40–55–553±µV/mAmAmWµV p-pnV/√Hz±ppm/1000 Hr.7070+70+85+125+125mAmA°CNOTES1Spec is guaranteed for all packages and grades. Cerdip packaged parts are 100% production test.2Load Regulation (Sinking) specification for SOIC (R) package is ±200 µV/mA.3The operating temperature ranged is defined as the temperatures extremes at which the device will still function. Parts may deviate from their specified performanceoutside their specified temperature ications subject to change without NG GUIDEModel1InitialError10 mV10 mV10 mV5 mV5 mV5 mV5 mV5 mV10 mV10 mV5 mV10 mVTemperatureCoefficient20 ppm/°C20 ppm/°C20 ppm/°C10 ppm/°C10 ppm/°C10 ppm/°C5 ppm/°C5 ppm/°C20 ppm/°C10 ppm/°C5 ppm/°C20 ppm/°CTemperatureRange0°C to +70°C0°C to +70°C0°C to +70°C0°C to +70°C0°C to +70°C0°C to +70°C0°C to +70°C0°C to +70°C–55°C to +125°C–55°C to +125°C–55°C to +125°C0°C to +70°CPackageOptions2Q-8SO-8N-8Q-8SO-8N-8Q-8N-8Q-8Q-8Q-8AD587JQAD587JRAD587JNAD587KQAD587KRAD587KNAD587LQAD587LNAD587SQAD587TQAD587UQAD587JCHIPSNOTES1For details on grade and package offerings screened in accordance with MIL-STD-883, refer to theAnalog Devices Military Products Databook or current AD587/883B data sheet.2N = Plastic DIP; Q = Cerdip; SO = SOIC.–2–REV. D

AD587ABSOLUTE MAXIMUM RATINGS*PIN CONFIGURATIONNOISE8REDUCTIONVIN to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36 VPower Dissipation (+25°C) . . . . . . . . . . . . . . . . . . . . .500 mWStorage Temperature . . . . . . . . . . . . . . . . . . .–65°C to +150°CLead Temperature (Soldering, 10 sec) . . . . . . . . . . . .+300°CPackage Thermal ResistanceθJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22°C/WθJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .110°C/WOutput Protection: Output safe for indefinite short to ground andmomentary short to VIN.*Stresses above those listed under Absolute Maximum Ratings may cause perma-nent damage to the device. This is a stress rating only; functional operation of thedevice at these or any other conditions above those indicated in the operationalsections of this specification is not implied. Exposure to absolute maximum ratingconditions for extended periods may affect device *1+VIN2AD5877TP*TOP VIEWTP*3(Not to Scale)6VOUT5TRIMGND4*TP DENOTES FACTORY TEST POINT. NO CONNECTIONS SHOULD BE MADE TO THESE SPECIFICATIONSParameterOutput VoltageGain AdjustmentLine Regulation13.5 V < + VIN < 36 VLoad RegulationSourcing 0 < IOUT

< 10 mASinking –10 < IOUT < 0 mAQuiescent CurrentShort-Circuit Current-to-GroundShort-Circuit Currrent-to-VOUTThe following specifications are tested at the die level for AD587JCHIPS. These die are probed at +25°C only.(TA = +25°C, VIN = +15 V unless otherwise noted) AD587JCHIPSMinTypMax9.990–1DIE LAYOUTUnits10.010V3170%±µV/VµV/mAµV/mAmAmAmADie Size: 0.081 × 0.060 InchesNOTES1Both VOUT pads should be connected to the output.2Sense and force grounds must be tied Thickness: The standard thickness of Analog Devices Bipolar dice is 24 mils ± 2 Dimensions: The dimensions given have a tolerance of ±2 g: The standard backside surface is silicon (not plated). Analog Devices does not recommendgold-backed dice for most : A diamond saw is used to separate wafers into dice thus providing perpendicular edges half-way through the contrast to scribed dice, this technique provides a more uniform die shape and size . The perpen-dicular edges facilitate handling (such as tweezer pick-up) while the uniform shape and size simplifiessubstrate design and die Surface: The standard top surface of the die is covered by a layer of glassivation . All areas arecovered except bonding pads and scribe e Metalization: The metalization to Analog Devices bipolar dice is aluminum. Minimumthickness is 10,000Å.Bonding Pads: All bonding pads have a minimum size of 4 mils by 4 mils. The passivation windows have 3.5 mils by 3.5 mils . D–3–

AD587THEORY OF OPERATIONThe AD587 consists of a proprietary buried Zener diode refer-ence, an amplifier to buffer the output and several high stabilitythin-film resistors as shown in the block diagram in Figure design results in a high precision monolithic 10 V outputreference with initial offset of 5 mV or less. The temperaturecompensation circuitry provides the device with a temperaturecoefficient of under 5 ppm/°C.+VIN2RSA1RFRT5TRIMRI4GNDNOTE:PINS 1,3, AND 7 ARE INTERNAL TEST CONNECTIONS TO THESE POINTS.6VOUTNOISEREDUCTION8NOISE PERFORMANCE AND REDUCTIONThe noise generated by the AD587 is typically less than 4 µVp-p over the 0.1 Hz to 10 Hz band. Noise in a 1 MHz band-width is approximately 200 µV p-p. The dominant source ofthis noise is the buried Zener which contributes approximately100 nV/√Hz. In comparison, the op amp’s contribution is negli-gible. Figure 3 shows the 0.1 Hz to 10 Hz noise of a typicalAD587. The noise measurement is made with a bandpass filtermade of a 1-pole high-pass filter with a corner frequency at0.1 Hz and a 2-pole low-pass filter with a corner frequency at12.6 Hz to create a filter with a 9.922 Hz 587Figure 587 Functional Block DiagramA capacitor can be added at the NOISE REDUCTION pin (Pin8) to form a low-pass filter with RS to reduce the noise contribu-tion of the Zener to the NG THE AD587Figure 3.0.1 Hz to 10 Hz NoiseThe AD587 is simple to use in virtually all precision referenceapplications. When power is applied to Pin 2, and Pin 4 isgrounded, Pin 6 provides a 10 V output. No external compo-nents are required; the degree of desired absolute accuracy isachieved simply by selecting the required device grade. TheAD587 requires less than 4 mA quiescent current from an oper-ating supply of +15 trimming may be desired to set the output level to exactly10.000 V (calibrated to a main system reference). System cali-bration may also require a reference voltage that is slightly differ-ent from 10.000 V, for example, 10.24 V for binary either case, the optional trim circuit shown in Figure 2 canoffset the output by as much as 300 mV, if desired, with mini-mal effect on other device characteristics.+VIN2OPTIONALNOISEREDUCTIONCAPACITORCN1µFVIN8NOISEVOREDUCTION6OUTPUTIf further noise reduction is desired, an external capacitor maybe added between the NOISE REDUCTION pin and ground asshown in Figure 2. This capacitor, combined with the 4 kΩ RSand the Zener resistances, form a low-pass filter on the outputof the Zener cell. A 1 µF capacitor will have a 3 dB point at40 Hz, and it will reduce the high frequency (to 1 MHz) noiseto about 160 µV p-p. Figure 4 shows the 1 MHz noise of a typi-cal AD587 both with and without a 1 µF of 1

µF Noise Reduction Capacitor onBroadband NoiseTURN-ON TIMEAD587TRIMGND4510kΩFigure al Fine Trim ConfigurationUpon application of power (cold start), the time required for theoutput voltage to reach its final value within a specified errorband is defined as the turn-on settling time. Two componentsnormally associated with this are: the time for the active circuitsto settle, and the time for the thermal gradients on the chip tostabilize. Figure 5 shows the turn-on characteristics of theAD587. It shows the settling to be about 60 µs to 0.01%. Notethe absence of any thermal tails when the horizontal scale is ex-panded to 1 ms/cm in Figure 5b.–4–REV. D

AD587Output turn-on time is modified when an external noise reduc-tion capacitor is used. When present, this capacitor acts as anadditional load to the internal Zener diode’s current source, re-sulting in a somewhat longer turn-on time. In the case of a 1 µFDYNAMIC PERFORMANCEThe output buffer amplifier is designed to provide the AD587with static and dynamic load regulation superior to less com-plete tor, the initial turn-on time is approximately 400 ms to0.01% (see Figure 5c).ical ed Time -On with 1

µF CNFigure -On CharacteristicsREV. DMany A/D and D/A converters present transient current loadsto the reference, and poor reference response can degrade theconverter’s 6 displays the characteristics of the AD587 output ampli-fier driving a 0 mA to 10 mA 7.0V1kΩAD587VL10V0VFigure ent Load Test CircuitFigure -Scale Transient ResponseFigure Scale Settling for Transient Load–5–

AD587In some applications, a varying load may be both resistive andcapacitive in nature, or the load may be connected to theAD587 by a long capacitive 7 displays the output amplifier characteristics driving a1000 pF, 0 mA to 10 mA confusion exists in the area of defining and specifying ref-erence voltage error over temperature. Historically, referenceshave been characterized using a maximum deviation per degreeCentrigrade; i.e., ppm/°C. However, because of nonlinearities intemperature characteristics which originated in standard Zenerreferences (such as “S” type characteristics), most manufactur-ers have begun to use a maximum limit error band approach tospecify devices. This technique involves the measurement of theoutput at three or more different temperatures to specify an out-put voltage error 9 shows the typical output voltage drift for the AD587Land illustrates the test methodology. The box in Figure 9 isbounded on the sides by thc operating temperature extremes,and on the top and the bottom by the maximum and minimumoutput voltages measured over the operating temperature slope of the diagonal drawn from the lower left to the upperright corner of the box determines the performance grade of 7.0VCL1000pF1kΩAD587VL10V0VFigure tive Load Transient /Response Test CircuitFigure Response with Capacitive LoadLOAD REGULATIONFigure l AD587L Temperature DriftThe AD587 has excellent load regulation characteristics. Figure8 shows that varying the load several mA changes the output byonly a few µ AD587J, K, L grade unit is tested at 0°C, +25°C and+70°C. Each AD587S, T, and U grade unit is tested at –55°C,+25°C and +125°C. This approach ensures that the variationsof output voltage that occur as the temperature changes withinthe specified range will be contained within a box whose diago-nal has a slope equal to the maximum specified drift. The posi-tion of the box on the vertical scale will change from device todevice as initial error and the shape of the curve vary. The maxi-mum height of the box for the appropriate temperature rangeand device grade is shown in Figure 10. Duplication of theseresults requires a combination of high accuracy and stabletemperature control in a test system. Evaluation of the AD587will produce a curve similar to that in Figure 9, but outputreadings may vary depending on the test methods and equip-ment l Load Regulation CharacteristicsTEMPERATURE PERFORMANCEThe AD587 is designed for precision reference applicationswhere temperature performance is critical. Extensive tempera-ture testing ensures that the device’s high level of performance ismaintained over the operating temperature range.–6–Figure m Output Change in mVREV. D

AD587NEGATIVE REFERENCE VOLTAGE FROM AN AD587The AD587 can be used to provide a precision –10.000 V outputas shown in Figure 11. The VIN pin is tied to at least a +3.5 Vsupply, the output pin is grounded, and the AD587 ground pinis connected through a resistor, RS, to a –15 V supply. The–10 V output is now taken from the ground pin (Pin 4) insteadof VOUT. It is essential to arrange the output load and the sup-ply resistor RS so that the net current through the AD587 is be-tween 2.5 mA and 10.0 mA. The temperature characteristicsand long-term stability of the device will be essentially the same asthat of a unit used in the standard +10 V output configuration.+3.5V → +26V2VINVOUT6The AD587 can also be used as a precision reference for mul-tiple DACs. Figure 13 shows the AD587, the AD7628 dualDAC and the AD712 dual op amp hooked up for single supplyoperation to produce 0 V to –10 V outputs. Because both DACsare on the same die and share a common reference and outputop amps; the DAC outputs will exhibit similar gain 587GND41nF← ILRS–15V5V2.5mA < –IL

<10mARS–10VFigure 13. AD587 as a 10 V Reference for a CMOS DualDACPRECISION CURRENT SOURCEFigure 587 as a Negative 10 V ReferenceUSING THE AD587 WITH CONVERTERSThe AD587 is an ideal reference for a wide variety of 8-, 12-,14- and 16-bit A/D and D/A converters. Several representativeexamples follow.10 V REFERENCE WITH MULTIPLYING CMOS D/A ORA/D CONVERTERSThe design of the AD587 allows it to be easily configured as acurrent source. By choosing the control resistor RC in Figure 14,you can vary the load current from the quiescent current (2 mAtypically) to approximately 10 mA.+VIN2VINVOUT6RC500ΩMIN10VIL = + IBIASRCThe AD587 is ideal for applications with 10- and 12-bit multi-plying CMOS D/A converters. In the standard hookup, asshown in Figure 12, the AD587 is paired with the AD754512-bit multiplying DAC and the AD711 high-speed BiFET OpAmp. The amplifier DAC configuration produces a unipolar 0 Vto –10 V output range. Bipolar output applications and otheroperating details can be found on the individual product 587GND4Figure 14. Precision Current SourceFigure Power 12-Bit CMOS DAC ApplicationREV. D–7–

AD587PRECISION HIGH CURRENT SUPPLYcapacitor is required only if the load has a significant capacitiveFor higher currents, the AD587 can easily be connected to acomponent. If the load is purely resistive, improved high fre-power PNP or power Darlington PNP device. The circuit inquency supply rejection results can be obtained by removing theFigure 15 can deliver up to 4 amps to the load. The 0.1 µ 15a. Precision High-Current Current SourceFigure ion High-Current Voltage SourceOUTLINE DIMENSIONSDimensions shown in inches and (mm).Mini-DIP (N-8) PackageCerdip (Q-8) PackageSmall Outline (R-8) Package–8–REV. D)D

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