CASCADE SURFACE MODIFICATION OF COLLOIDAL QUANTUM

专利内容由知识产权出版社提供专利名称：CASCADE SURFACE MODIFICATION OFCOLLOIDAL QUANTUM DOT INKS ENABLESEFFICIENT BULK HOMOJUNCTIONPHOTOVOLTAICS发明人：MIN-JAE CHOI,FRANCISCO PELAYO GARCIADE ARQUER,SJOERD HOOGLAND,EDWARDH. SARGENT申请号：US17214113申请日：20210326公开号：US2A1公开日：20210930专利附图：

摘要：Disclosed herein are homogeneous CQD bulk homojunction solids preparedthrough a cascade surface modification (CSM) strategy. The CSM includes an initialhalogenation step of CQD surfaces to attain an initial sufficient passivation; and asubsequent step that reprograms CQD surfaces with functional ligands to control thedoping character and solubility properties of the resulting CQD inks. The resulting p-typeand n-type CQDs exhibit a distinct potential difference, which induces a built-in electricfield between the constituent classes of CQDs. By controlling the colloidal solubility ofthe inks, homogeneous CQD bulk homojunction films have been achieved, whereas it isshown that the use of prior ink strategies results in inhomogeneous films as a result ofpoor miscibility. The homogeneous CQD bulk homojunction films exhibit a 1.5-foldincrease in the carrier diffusion length and outperforms previously-reported CQD solarcells, achieving a record PCE of 13.3%.申请人：QD SOLAR INC.地址：TORONTO CA

国籍：CA