MANUFACTURE OF CAPACITOR


2023年12月15日发(作者:plants怎么读)

专利内容由知识产权出版社提供专利名称:MANUFACTURE OF CAPACITOR发明人:NAKAMURA TAKASHI,中村 孝申请号:JP特願平9-326851申请日:19971128公开号:JP特開平11-163271A公开日:19990618专利附图:摘要:PROBLEM TO BE SOLVED: To provide the manufacture of a capacitor, in whichthe deterioration of capacitance characteristics and breakdown-strength characteristicsand the lowering of yield due to nonuniformity in the film thickness of a ferroelectriclayer are not generated, even if there exist foreign matters and irregularities on asubstrate surface. SOLUTION: When a capacitor, in which a lower electrode 2 consisting ofa material containing a precious metal is formed on a substrate 1, a dielectric layer 3consisting of a ferroelectric or a high dielectric-constant material or the like is formed onthe lower electrode 2 and an upper electrode 4 is shaped onto the dielectric layer 3, is

manufactured, the lower electrode 2 is formed so that the surface of the lower electrode2 is planarized by the application of a coating agent for an electrode material, and thedielectric layer 3 is formed on the lower electrode 2.申请人:ROHM CO LTD,ローム株式会社地址:京都府京都市右京区西院溝崎町21番地国籍:JP代理人:河村 洌


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